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DDS 专用芯片静态参数测试方法研究磁

刘路扬 张虹 张碚 吕兵

计算机与数字工程Issue(1):70-74,5.
计算机与数字工程Issue(1):70-74,5.DOI:10.3969/j.issn1672-9722.2015.01.019

DDS 专用芯片静态参数测试方法研究磁

Direct-Digital-Synthesis Dedicated Silicon Static Parameter Testing Method

刘路扬 1张虹 1张碚 1吕兵1

作者信息

  • 1. 航天科工二院二〇一所微电子器件可靠性研究室 北京 100854
  • 折叠

摘要

Abstract

The paper focuses on static parameter testing method of DAC embedded in DDS based on ATE .Due to the inherent characteristics of DDS dedicated silicon ,it can only output a certain frequency sine wave .Testing developers are on‐ly able to control the frequency and amplitude of the sine wave .But the sine‐wave voltage is non‐linear ,so the DAC tradi‐tional testing method using linear ramp voltage can not be used for static parameter testing of DDS dedicated silicon .The em‐bedded DAC static parameters testing can be only relied on indirect ways .In order to achieve the test automation of DAC em‐bedded in DDS chip ,the non‐linear amplitude information of the sine wave is converted to linear angle information in the test method .The experiments demonstrate that this method can achieve efficiently and reliably in actual application .

关键词

DDS 专用芯片/数模转换器/静态参数测试

Key words

direct digital synthesis dedicated silicon/digital-to-analog converter/linear parameter

分类

信息技术与安全科学

引用本文复制引用

刘路扬,张虹,张碚,吕兵..DDS 专用芯片静态参数测试方法研究磁[J].计算机与数字工程,2015,(1):70-74,5.

计算机与数字工程

OACSTPCD

1672-9722

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