南京大学学报（自然科学版）Issue(4)：684-691,8.DOI:10.13232/j.cnki.jnju.2015.04.005
基于铁电聚合物 P（VDF-TrFE）的多级存储研究
Study on multilevel memory based on ferroelectric polymer P(VDF-TrFE)
摘要
Abstract
With the advantages of fine compatibility with silicon elements and ease of solution process,ferroelectric polymer poly(vinylidene fluoride-ran-trifluoroethylene)(P(VDF-TrFE)))shows great prospects in future erasable non-volatile memories.Construction of multilevel states is a powerful way to increase storage density and reduce pro-duction cost.Using nanoimprint lithography as main technical means,we successfully realized P(VDF-TrFE)based multilevel memory with high density by simply fabricating highly ordered nanopatterned conductive substrates.In this paper,piezoresponse force microscopy piezoresponse force microscopy(PFM)was utilized for observing the bias voltage dependent polarization evolution of P (VDF-TrFE )on patterned conductive substrate,which visually confirmed our samples could form three different polarization statesits under different external electric fields.Our work provides a new route for the design of nano-scale multilevel storages.关键词
纳米压印/PFM/P(VDF-TrFE)/多级存储Key words
nanoimprint lithography/piezoresponse force microscopy/poly(vinylidene fluoride-ran-trifluoroethylene)/multilevel memory分类
数理科学引用本文复制引用
陈雷,吴阳江,李晓慧,傅超,王芳,胡志军..基于铁电聚合物 P（VDF-TrFE）的多级存储研究[J].南京大学学报（自然科学版）,2015,(4):684-691,8.基金项目
国家自然科学基金(51473112) （51473112）
