南京师大学报（自然科学版）Issue(4)：51-58,8.
温度和掺杂浓度对delta掺杂GaAs量子阱电子态结构和子带间光学吸收的影响
Effect of Temperature and Doping Concentration on Structure of Electronic State and Intersubband Optical Absorption of Si Delta-Doped GaAs Quantum Well
赵恒飞 1杨双波1
作者信息
- 1. 南京师范大学物理科学与技术学院，南京210023
- 折叠
摘要
Abstract
By solving Schrödinger equation and Poisson equation self-consistently under the effective mass approximation, we calculated the structure of the electronic state of Siδ-doped GaAs quantum well system at T≠0. We studied the effect of temperature,doping concentration,and energy of incident light on the intersubband energy,Fermi energy,electron con-centration distribution and intersubband optical absorption coefficient. It is found that at the given doping concentration, the Fermi energy decrease with the increase of temperature,the total intersubband optical absorption coefficient decrease with the increase of temperature. And at the given temperature, the total intersubband optical absorption coefficient increase with the increase of doping concentration.关键词
GaAs量子阱/入射光吸收系数/温度/掺杂浓度/电子态结构Key words
GaAs quantum well/intersubband optical absorption/temperature/doping concentration/the structure of electronic state分类
数理科学引用本文复制引用
赵恒飞,杨双波..温度和掺杂浓度对delta掺杂GaAs量子阱电子态结构和子带间光学吸收的影响[J].南京师大学报（自然科学版）,2014,(4):51-58,8.
