南阳师范学院学报Issue(3)：12-15,4.
高k栅介质厚度对MOS器件特性影响的数值模拟研究
Numerical simulation study on the influence of the high-k gate dielectric thickness to MOS device characteristics
摘要
Abstract
The influence of the high-k gate dielectric thickness to MOS device characteristics was studied by nu-merical analysis in this paper. Based on numerical analysis of nonlinear finite element method, the effect of die-lectric thickness on drive current and threshold voltage of MOS devices was evaluated. Therefore, the output char-acteristic curves, transfer characteristic curves and drain current as a function of k value were obtained. The re-sults show that when the gate dielectric thickness decreased, the drive current continuously increased and the threshold voltage decreased significantly. Meanwhile, the drain current enhanced continuously as the k value in-creased in a certain range.关键词
数值模拟/栅介质厚度/驱动电流/阈值电压Key words
numerical simulation/gate oxide thickness/drive current/threshold voltage分类
信息技术与安全科学引用本文复制引用
刘赐德,钱明,李心豪,丁楠,刘旭焱..高k栅介质厚度对MOS器件特性影响的数值模拟研究[J].南阳师范学院学报,2015,(3):12-15,4.基金项目
国家自然科学基金(61306007) （61306007）
河南省教育厅科学技术研究重点项目(14A510004) （14A510004）
南阳师范学院青年项目 （）
南阳师范学院SPCP项目(ZB-2014-087) （ZB-2014-087）
