山东建筑大学学报Issue(1)：47-52,6.
反应磁控溅射法制备Zn3 N2薄膜的工艺研究
Technical study on Zn3 N2 thin film prepared by reactive magnetron sputtering
摘要
Abstract
Research and preparation of high quality Zn3 N2 thin film contributes to the expansion of new thin film materials system. Magnetron sputtering was employed to deposit Zn3 N2 thin film under the varied sputtering powers,N2-Ar gases flow rates,substrate types and temperatures. The samples were investigated by XRD,SEM and AFM. It shows that Zn3 N2 thin film deposited on the quartz glass turns to have greater grain size and stronger diffraction peak with the increased N2-Ar gases flow rate. When substrate temperature arises,the grain size of Zn3 N2 thin film decreases,but the film is still crystal having one preferred orientation. When sputtering power increases,the film structure turns to be polycrystalline. The structure of Zn3 N2 thin film deposited on the single crystal silicon substrate of<100> crystal orientation are single-crystal. Zn3 N2 thin film which deposited on the single crystal silicon substrate of <111> crystal orientation are non-crystal.关键词
磁控溅射技术/Zn3N2 薄膜/衬底/择优取向Key words
magnetron sputtering technology/Zn3 N2 thin film/substrate/preferred orientation引用本文复制引用
孙舒宁,王凤翔,陈志华,付刚,张秀全..反应磁控溅射法制备Zn3 N2薄膜的工艺研究[J].山东建筑大学学报,2015,(1):47-52,6.基金项目
济南市科技局项目 （）
