上海有色金属Issue(2)：75-78,4.DOI:10.13258/j.cnki.snm.2015.02.007
6英寸重掺 Sb 衬底外延后表面异常解决
Epi Defects Solving for 6″Heavy-doped Sb Substrate
方正华1
作者信息
- 1. 上海合晶硅材料有限公司，上海 201617
- 折叠
摘要
Abstract
The 6 inch Sb wafer is the dominating substrate for Discrete Device used for EPI. Bubble-liked defects on this kind of substrate after EPI can not be removed by polishing. Through the experimental analysis of root cause of defects,the paper aims to examine the relationship between EPI defects and silicon crystal so as to find the possible solution.关键词
基板/外延/气泡状缺陷/外延缺陷/硅晶体Key words
substrate/epitaxy/bubble-liked defects/EPI defects/silicon crystal分类
信息技术与安全科学引用本文复制引用
方正华..6英寸重掺 Sb 衬底外延后表面异常解决[J].上海有色金属,2015,(2):75-78,4.
