无机材料学报Issue(9)：931-935,5.DOI:10.15541/jim20130659
Sb掺杂对N型half-Heusler材料热电性能的影响
Effect of Sb Doping on Thermoelectric Property of N-type Half-Heusler Compounds
摘要
Abstract
The effect of Sb doping on thermoelectric transport properties of N-type half-Heusler compounds Zr0.25Hf0.25Ti0.5NiSn1-xSbx(x=0, 0.002, 0.005, 0.01, 0.02, 0.03) was studied. Results show that with increasing Sb doping amount, the carrier concentration of the samples increases while the electrical resistivity decreases, especially sharply at low temperature range (~300 K). The Seebeck coefficient decreases, and the temperatures at which the Seebeck co-efficient reaches climax move to higher ones. Therefore, the power factor increases by ~20%. The total thermal con-ductivity increases mainly due to the enhancement of electrical thermal conductivity, the lattice thermal conductivity remains almost unchanged. For the samples withx<0.01, the maximumZT value is about 0.77 at 800 K, and among the samples, the one withx=0.005 performs the best in the whole temperature range.关键词
N型Half-Heusler/Sb掺杂/热电传输特性Key words
N-type half-Heusler/Sb doping/thermoelectric transport property分类
数理科学引用本文复制引用
樊毅,李小亚,蒋永锋,包晔峰..Sb掺杂对N型half-Heusler材料热电性能的影响[J].无机材料学报,2014,(9):931-935,5.基金项目
国家自然科学基金(51372261) （51372261）
国家基础研究项目(2013CB632504)National Natural Science Foundation of China (51372261) （2013CB632504）
National Basic Research program of China (2013CB632504) （2013CB632504）
