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稀土氧化物对SPS烧结AlN陶瓷电性能的影响

黄林芸 李晨辉 柯文明 史玉升 贺智勇 张启富

无机材料学报Issue(3):267-271,5.
无机材料学报Issue(3):267-271,5.DOI:10.15541/jim20140428

稀土氧化物对SPS烧结AlN陶瓷电性能的影响

Effect of Rare Earth Oxides on Electrical Properties of Spark Plasma Sintered AlN Ceramics

黄林芸 1李晨辉 1柯文明 1史玉升 1贺智勇 2张启富2

作者信息

  • 1. 华中科技大学材料成形与模具技术国家重点实验室,武汉430074
  • 2. 中国钢研科技集团有限公司,北京100081
  • 折叠

摘要

Abstract

AlN ceramics doped with rare earth oxide (Sm2O3, Y2O3) were prepared bySpark Plasma Sintering (SPS) in nitrogen atmosphere using AlN powder as raw materials. The effect of rare earth oxide on the phase composition, microstructure and electrical resistivity of AlN ceramics were investigated. The results showed that those sintering additives promoted densification through liquid-phase sintering. AlN ceramics with elec-trical resistivity values of 1×1010–1×1012Ω•cm were obtained by precipitating rare earth aluminates as a conducting pathway at the grain boundaries. With the increasing of Sm2O3 doping, the phase of samarium aluminate gradually changed from Sm4Al2O9 to SmAlO3 which had a higher resistivity than Sm4Al2O9. 3wt% Sm2O3 doped AlN ceramics had the minimum resistivity of 1.32×1010Ω•cm with the relative density of 99.33%. The yttrium aluminate phase gradually changed from Y3Al5O12 to Y4Al2O9 with the increase of Y2O3-doping. The electrical resistivity of different yttrium aluminates were about 1×108Ω•cm. Y2O3- doped AlN sample with over 3wt% Y2O3 had an electrical resistivity about 1×1010Ω•cm. 4wt% Y2O3 doped AlN ceramic had the electrical resistivity of 1.60×1010Ω•cm with the maximum relative density of 99.08%.

关键词

氮化铝/氧化钐/氧化钇/放电等离子烧结/电性能

Key words

AlN/Sm2O3/Y2O3/SPS/electrical properties

分类

信息技术与安全科学

引用本文复制引用

黄林芸,李晨辉,柯文明,史玉升,贺智勇,张启富..稀土氧化物对SPS烧结AlN陶瓷电性能的影响[J].无机材料学报,2015,(3):267-271,5.

基金项目

国家重大科技专项基金(2013ZX02104001) National Key Scientitic and Technological Project (2013ZX02104001) (2013ZX02104001)

无机材料学报

OA北大核心CSCDCSTPCD

1000-324X

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