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基于KMC方法的Ag膜生长初期的计算机模拟

武频 孙建城 张慧茹

计算机技术与发展Issue(1):164-167,172,5.
计算机技术与发展Issue(1):164-167,172,5.DOI:10.3969/j.issn.1673-629X.2015.01.037

基于KMC方法的Ag膜生长初期的计算机模拟

Computer Simulation of Initial Growth of Ag Film Based on KMC

武频 1孙建城 1张慧茹2

作者信息

  • 1. 上海大学 计算机工程与科学学院,上海 200072
  • 2. 上海大学 材料学院 复合材料研究中心,上海 200072
  • 折叠

摘要

Abstract

In this paper,aimed at the lattice characteristics of silver and silver film growth feature,the silver film growth model is set up based on KMC,surface morphology of monolayer Ag film is simulated. Under the condition of periodic basement and interlayer between atoms,use EAM ( Embedded Atom Method) to calculate the inter-atomic potential. According to the characteristics of the lattice of metal Ag and film-forming characteristic,carry out the modeling,programming,and experiment. The results show that in the case of constant temperature,with the increase of coverage, the number of surface atoms increases, and a two-dimensional island growth raises. The growth of the island morphology has experienced the process from scattered to the growth of the condensation. The number of atoms is-land is reduced,at the same time,the size of the island is increased.

关键词

银薄膜生长/蒙特卡洛方法/嵌入式原子方法/计算机模拟

Key words

silver film growth/KMC method/EAM/computer simulation

分类

信息技术与安全科学

引用本文复制引用

武频,孙建城,张慧茹..基于KMC方法的Ag膜生长初期的计算机模拟[J].计算机技术与发展,2015,(1):164-167,172,5.

基金项目

国家自然科学基金资助项目(11002086/A020415,51103083) (11002086/A020415,51103083)

计算机技术与发展

OACSTPCD

1673-629X

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