物理化学学报Issue(3)：457-466,10.DOI:10.3866/PKU.WHXB201501093
电化学法制备部分还原氧化石墨烯薄膜及其光电性能
Photoelectric Properties of Graphene Oxide Film Prepared with the Electrochemical Method Using Varying Levels of Reduction
摘要
Abstract
This article details a quick and simple method to prepare graphene oxide (GO) film and tune its energy level by adjusting the oxygen content. GO films with different layers were fabricated on fluorine-doped SnO2 (FTO) conductive glass using the anodic electrophoretic deposition process. The degree of oxidation was regulated by cathodic electrochemical reduction. The as-prepared GO films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), ultraviolet-visible absorption (UV-Vis) spectroscopy, X-ray photoelectron spectra (XPS), Raman spectroscopy and electrochemical analysis. The number of GO layers was varied between 77 and 570 by control ing the electrophoretic deposition time (from 20 to 350 s). Changing the degree of oxidation caused the optical gap of GO to vary between 1.0 and 2.7 eV, and also impacted the edge of the conduction band and the Fermi energy for the sample. As a p-type semiconductor, a p-n junction can be formed between reduced GO and FTO. Under simulated sunlight irradiance of 100 mW∙cm-2, the GO film with a deposition time of 300 s and reduction time of 120 s produced the highest photocurrent density of 5.25×10-8 A∙cm-2.关键词
氧化石墨烯/电化学/薄膜/能级/光电流密度Key words
Graphene oxide/Electrochemistry/Film/Energy level/Photocurrent density分类
化学化工引用本文复制引用
李文有,贺蕴秋,李一鸣..电化学法制备部分还原氧化石墨烯薄膜及其光电性能[J].物理化学学报,2015,(3):457-466,10.基金项目
The project was supported by the National Natural Science Foundation of China (51172162).国家自然科学基金(51172162)资助项目 （51172162）
