物理化学学报Issue(6)：1207-1214,8.DOI:10.3866/PKU.WHXB201504142
nc-Si：H/c-Si硅异质结太阳电池中本征硅薄膜钝化层的优化
Optimization of Intrinsic Silicon Passivation Layers in nc-Si:H/c-Si Silicon Heterojunction Solar Cells
摘要
Abstract
A series of intrinsic silicon thin films were prepared using radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at low temperature and low power density. We investigated the influence of silane concentration (CS) on the structural, optical, and electronic properties, and passivation quality of the intrinsic silicon films, and the performances of hydrogenated nanocrystal ine silicon/crystal ine silicon (nc-Si:H/c-Si) silicon heterojunction (SHJ) solar cells. The results show that with decreasing silane concentration, substantial changes in the crystal ine volume fraction, hydrogen concentration, structure factor, optical bandgap, and photosensitivity of the film take place in the transition zone. The passivation quality of intrinsic silicon thin films is decided by the hydrogen content and bonding structure of the film. Films close to the transition zone show good compactness and photosensitivities, high hydrogen content, and low state densities, and contain abundant SiH bonds. The films provide excel ent passivation for c-Si surfaces and significantly enhance the open-circuit voltages of nc-Si:H/c-Si SHJ solar cel s. However, the passivation quality deteriorates seriously when the film is too thin. In this work, the optimum silane concentration was found to be 6%(molar fraction). By optimizing the film thickness of the passivation layers with CS=6%, we obtained an nc-Si:H/c-Si SHJ solar cel with an open-circuit voltage of 672 mV, short-circuit current density of 35.1 mA· cm-2, fil factor of 0.73, and efficiency of 17.3%.关键词
本征硅薄膜/射频等离子体增强化学气相沉积/界面钝化/少子寿命/硅异质结太阳电池Key words
Intrinsic silicon thin film/Radio-frequency plasma enhanced chemical vapor deposition/Interface passivation/Minority carrier lifetime/Silicon heterojunction solar cel分类
化学化工引用本文复制引用
乔治,解新建,薛俊明,刘辉,梁李敏,郝秋艳,刘彩池..nc-Si：H/c-Si硅异质结太阳电池中本征硅薄膜钝化层的优化[J].物理化学学报,2015,(6):1207-1214,8.基金项目
The project was supported by the National High Technology Research and Development Program of China (863)(2012AA050301) and Scientific Research Program of Hebei Education Department, China (Z2010304).国家高技术研究发展计划项目(863)(2012AA050301)和河北省教育厅科研计划项目(Z2010304)资助 （863）
