物理学报Issue(21)：290-299,10.DOI:10.7498/aps.63.216101
He离子辐照6H-SiC引入缺陷的光谱研究
Spectra study of He-irradiation induced defects in 6H-SiC
摘要
Abstract
Specimens of 6H-SiC were irradiated by 300keV He ions at temperatures of RT, 450, 600 and 750 ◦C with fluences ranging from 1 × 1015 to 1 × 1017 cm-2. Post-irradiation, virgin and irradiated 6H-SiC specimens are measured and studied by microscopic laser confocal Raman spectrometer and UV-visible transmission apparatus. Analyses of both experimental results shown that production and recovery of defects caused by irradiation are directly related to the fluences and temperatures. Amorphization of 6H-SiC irradiated at RT occurrs, which is reflected by the disappearance of the Raman peaks and the saturation of the relative Raman intensity(simultaneously a strong Si-Si peak appears). Recovery of defects may exist in high-temperature irradiation, when helium bubbles do not exist, so that irradiation-induced defects can be easily recovered during irradiation process at elevated temperatures; but when helium bubbles are present, they can inhibit defects to recover, as shown in the trend of slopes of curves representing the relative Raman intensity and the relative absorption coefficients. This paper mainly focuses on the effects of helium bubbles on defect accumulation and recovery under the condition of high temperature irradiation, and then the comparison with the results of 6H-SiC irradiated by Si ions at elevated temperatures.关键词
6H-SiC/氦泡/拉曼散射光谱/紫外可见透射光谱Key words
6H-SiC/helium bubbles/Raman scattering spectra/UV-visible transmittance spectra引用本文复制引用
杜洋洋,张宏鹏,李远飞,王霁,朱卉平,宋鹏,王栋,李炳生,王志光,孙建荣,姚存峰,常海龙,庞立龙,朱亚滨,崔明焕..He离子辐照6H-SiC引入缺陷的光谱研究[J].物理学报,2014,(21):290-299,10.基金项目
国家重点基础研究发展计划(973计划)(批准号:2010cB832902)和国家自然科学基金(批准号:11005130,11105190,11475229,91126011)资助的课题.* Project supported by the National Basic Research Program of China (973 Program)(Grant No.2010cB832902), and the National Natural Science Foundation of China (Grant Nos.11005130,11105190,11475229,91126011) （973计划）
