物理学报Issue(21)：380-386,7.DOI:10.7498/aps.63.217806
硅基板和铜基板垂直结构GaN基LED变温变电流发光性能的研究
Electroluminescence prop erties of vertical structure GaN based LED on silicon and copp er submount at different temp eratures and current densities
摘要
Abstract
GaN-based light-emitting diode (LED) thin films grown on Si(111) substrates are successfully detached and trans-ferred to copper and silicon submounts, and then become 40mil high power vertical structure LED chips. Electrolumi-nescence properties of the two kinds of chips with the same expitaxial structure are investigated at different forward current densities and ambient temperatures. The obtained results are as follows. 1) at the same temperature, the EL peak wavelength of the chip with copper submount is longer than that of the chip with silicon submount. Under 13 K, the EL peak wavelength of the chip with copper submount is about 6 nm longer than that of chip with silicon submount as the driving current increases from 0.01 mA to 400 mA. While under 300 K, the difference in EL peak wavelength between the two kinds of chips at 0.01 mA is only about 3 nm; as the current increases to 400 mA, the difference will tend to zero and the spectra will coincide. 2) At the same current density, as the temperature increases from 13 K to 320 K, the EL peak wavelengths of the two kinds of chips are S-shaped, and the spectra tend to coincide. 3)When the temperature is below 100 K, the current density droop effect of the chips with copper submount is more abvious than that of chips with silicon submount, while above 100 K, the results are just inverse. Perhaps, it is due to the fact that the differences in thermal expansion coefficient and thermal conductivity between the two kinds of submounts lead to the diffrent EL properties.关键词
GaN/热膨胀系数/内量子效率/热导率Key words
GaN/thermal expansion coefficient/internal quantum efficiency/thermal conductivity引用本文复制引用
黄斌斌,王立,方文卿,刘军林,江风益,熊传兵,张超宇,黄基锋,王光绪,汤英文,全知觉,徐龙权,张萌..硅基板和铜基板垂直结构GaN基LED变温变电流发光性能的研究[J].物理学报,2014,(21):380-386,7.基金项目
国家自然科学基金(批准号:51072076,11364034,61334001)、国家高技术研究发展计划(批准号:2011AA03A101,2012AA041002)、国家科技支撑计划(批准号:2011BAE32B01)资助的课题.* Project supported by the National Natural Science Foundation of China (Grant No.51072076,11364034,61334001), the National High Technology Research and Development Program of China (Grant Nos.2011AA03A101,2012AA041002), and National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No.2011BAE32B01) （批准号:51072076,11364034,61334001）
