物理学报Issue(3)：537-542,6.DOI:10.7498/aps.64.038501
压应变Ge/（001）Si1-xGex空穴散射与迁移率模型∗
Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex
摘要
Abstract
Strained Ge attracts attention of researchers for its high mobility and compatibility with Si technology. Based on the valence band model for compressively strained Ge/(001)Si1−xGex, the relationships between hole scattering, mobility, and Ge content (x) are established in this paper, including ionized impurity, acoustic phonon, non-polar optical phonon, total scattering rates, and the averaged and directional mobility of holes. Our quantitative data gained within the models can provide valuable references for the research of modified Ge materials physics and the design of the related devices.关键词
锗/应变/散射/迁移率Key words
Ge/strain/scattering/mobility引用本文复制引用
白敏,宣荣喜,宋建军,张鹤鸣,胡辉勇,舒斌..压应变Ge/（001）Si1-xGex空穴散射与迁移率模型∗[J].物理学报,2015,(3):537-542,6.基金项目
教育部博士点基金(批准号：JY0300122503)和陕西省自然科学基础研究计(批准号:2014JQ8329)资助的课题.* Project supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No.2014JQ8329) （批准号：JY0300122503）
