物理学进展Issue(5)：226-234,9.
快恢复二极管的发展
Review of the Development of Fast Recovery Diode
摘要
Abstract
Power diodes are widely used in power electronics systems as the popular switching devices. Power diodes in IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) modules are extremely important components, for which low loss and fast-soft recov-ery characteristics are indispensable. This paper reviews the two major technologies which improve the reverse recovery of power diodes, namely the carrier lifetime killing and the emitter efficiency control. Furthermore, simulations are carried out to verify the emitter effciency control. Finally, the promising reverse recovery of SiC diodes will be introduced and forecasted.关键词
快恢复二极管/载流子寿命控制/发射极效率/碳化硅二极管Key words
FRD/carrier lifetime killing/emitter efficiency control/SiC diodes分类
数理科学引用本文复制引用
黄昊,沈征,王俊,王达名..快恢复二极管的发展[J].物理学进展,2014,(5):226-234,9.基金项目
国家自然科学基金项目，项目号51277060国家国际科技合作专项项目，项目号2013DFB60250 （）
