微型机与应用Issue(21)：25-28,4.
基于gm/ID的CMOS模拟集成电路设计方法及应用
CMOS analog IC design methodology based on gm/ID and its application
石江华 1韩志刚 1徐鹏程1
作者信息
- 1. 同济大学 电子与信息工程学院，上海 201804
- 折叠
摘要
Abstract
This paper describes a transistor optimization methodology for analog integrated CMOS circuit based on the gm/ID parameter characteristic of transistor. This methodology dependents on curve of gm/ID and IC in all operations regions. This curve is continuous in all regions of operation. By an example, we show the results obtained from the design of a two-stage-CMOS op amp. Experimental results are presented, in order to validate the methodology.关键词
运算放大器/gm/ID 设计方法/反型系数Key words
operational amplifier/gm/ID design method/IC分类
电子信息工程引用本文复制引用
石江华,韩志刚,徐鹏程..基于gm/ID的CMOS模拟集成电路设计方法及应用[J].微型机与应用,2014,(21):25-28,4.
