西安电子科技大学学报（自然科学版）Issue(3)：131-137,7.DOI:10.3969/j.issn.1001-2400.2014.03.019
一种适用于自旋磁随机存储器的低压写入电路
Design of the writing circuit with a low supply voltage for the spin-transfer torque random access memory
摘要
Abstract
A writing circuit with a low supply voltage for the spin transfer torque magnetic random access memory (STT-MRAM ) is proposed to reduce the writing power consumption . Using the combination of the column selecting and the isolation between writing and reading operation , the writing circuit with a low supply voltage decreases the resistor value of the writing branch and the value of the reading current . Therefore the switching power efficiency and the reliability can be improved . By using an accurate compact model of the 65 nm magnetic tunnel junction ( M TJ) and a commercial CMOS design-kit , mixed transient and statistical simulations have been performed to validate this design . Simulation results indicate that the proposed circuits can decrease the writing power consumption and improve the reliability .关键词
自旋转移力矩磁随机存储器/磁隧道结/低功耗/高可靠性Key words
spin transfer torque magnetic random access memory/magnetic tunnel junction/low power/high reliability分类
信息技术与安全科学引用本文复制引用
张丽,庄奕琪,赵巍胜,汤华莲..一种适用于自旋磁随机存储器的低压写入电路[J].西安电子科技大学学报（自然科学版）,2014,(3):131-137,7.基金项目
国家自然科学基金资助项目（61204092）；国家重大科技专项资助项目（2012ZX03001018-003）；中央高校基本科研业务费资助项目 （）
