现代电子技术Issue(14)：128-131,4.
系统集成中的高阻硅IPD技术
High resistance silicon integrated passive device technology for system integration
摘要
Abstract
Integrated passive device(IPD)technology can integrate discrete passive devices into a substrate,and improve the Q factor and system integration level. The inductor whose Q factor is up to 70 can be prepared by high resistance silicon IPD (HRS-IPD) technology because the HRS substrate has a good RF property. HRS-IPD based on thin film technology has the characteristics of high precision and high integration;meanwhile,by which the feature size can be reduced by one order of mag-nitude. Batch fabrication with lower cost can be realized with the mature silicon technology. Furthermore,HRS-IPD technology can be combined with through silicon via(TSV)technology to realize 3D system packaging. The analyses indicate that the HRS-IPD technology has a good application prospect in system integration.关键词
IPD/系统集成/高阻硅/无源器件/滤波器Key words
IPD/system integration/high resistance silicon/passive device/filter分类
信息技术与安全科学引用本文复制引用
刘勇..系统集成中的高阻硅IPD技术[J].现代电子技术,2014,(14):128-131,4.基金项目
国防预研资助项目；国家自然科学基金资助项目 （）
