太赫兹科学与电子信息学报Issue(2)：238-241,265,5.DOI:10.11805/TKYDA201402.0238
3 GHz~5 GHz CMOS超宽带低噪声放大器分析与设计
Analysis and design of a 3 GHz-5 GHz CMOS Ultra-Wideband Low Noise Amplifier
唐江波1
作者信息
- 1. 广西壮族自治区 龙潭医院，广西壮族自治区 柳州 545005
- 折叠
摘要
Abstract
A Ultra-Wideband Low Noise Amplifier(UWB LNA) with out-band suppression function is designed by using the TSMC 0.18μm CMOS process. The circuit is based on narrow-band PCSNIM LNA topology, and a second-order Chebyshev filter and out-band suppression capacitor are used to replace the traditional input matching network. The consumption of LNA is about 11.5 mW at 1.8 V DC power supply. In the 3 GHz-5 GHz UWB frequency band, the simulation results are showed in the forward gain about 13.9 dB, the input reflection coefficient S11, output reflection coefficient S22 are below-13 dB and-15 dB, respectively;the minimum noise figure only 0.997 dB;the third-order intercept point IIP3 averages at 5.40 dB. In addition, some other satisfactory results are obtained in the reverse isolation S12 and the stability StabFact1 etc.关键词
超宽带/低噪声放大器/二阶切比雪夫滤波器/带外抑制电容Key words
Ultra-Wideband/Low Noise Amplifier/second-order Chebyshev filter/out-band suppression capacitor分类
信息技术与安全科学引用本文复制引用
唐江波..3 GHz~5 GHz CMOS超宽带低噪声放大器分析与设计[J].太赫兹科学与电子信息学报,2014,(2):238-241,265,5.
