太赫兹科学与电子信息学报Issue(5)：644-646,652,4.DOI:10.11805/TKYDA201405.0644
基于二氧化钒薄膜的太赫兹开关器件
Terahertz switching device based on vanadium dioxide thin film
郭超 1罗振飞 2王度 3孔维鹏 2孙年春 3杨存榜 2周逊3
作者信息
- 1. 四川大学电子信息学院，四川成都 610065
- 2. 中国工程物理研究院 激光聚变研究中心，四川成都 610041
- 3. 中国工程物理研究院 太赫兹科学技术研究中心，四川绵阳 621999
- 折叠
摘要
Abstract
As a high-quality optoelectronic material, vanadium dioxide(VO2) has drawn much attention over the past years, and it shows great potential for various applications such as information storage device, optical modulator, energy-saving, infrared detector, etc. In this work, nanocrystalline VO2 thin films are prepared by reactive direct current magnetron sputtering and in-situ oxidation annealing, and the microstructures and optical properties of films are investigated. In order to study the switching characteristic of VO2 thin film to 2.52 THz radiation under varied temperature conditions, the corresponding testing system is established. The results show that the VO2 thin film is polycrystalline, exhibiting obvious modulation effect on the terahertz wave at 2.52 THz, which makes VO2 thin film a promising functional material for the terahertz switching/modulation devices.关键词
太赫兹/VO2薄膜/开关器件/热致相变Key words
terahertz/vanadium dioxide thin film/switching device/thermal induced transition分类
信息技术与安全科学引用本文复制引用
郭超,罗振飞,王度,孔维鹏,孙年春,杨存榜,周逊..基于二氧化钒薄膜的太赫兹开关器件[J].太赫兹科学与电子信息学报,2014,(5):644-646,652,4.
