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侵彻过载高速存储测试的研究与实现

高进忠 孙远程 黄玉川 苗江宏

太赫兹科学与电子信息学报Issue(6):813-816,4.
太赫兹科学与电子信息学报Issue(6):813-816,4.DOI:10.11805/TKYDA201406.0813

侵彻过载高速存储测试的研究与实现

High-speed storage measurement of the projectile body penetration overload

高进忠 1孙远程 1黄玉川 1苗江宏1

作者信息

  • 1. 中国工程物理研究院 电子工程研究所,四川 绵阳 621999
  • 折叠

摘要

Abstract

For the disadvantages of the hybrid microcontroller application data capture, the serial acquisition storage structure is created by adopting external Analog to Digital(A/D) converter and the single chip microcomputer Serial Peripheral Interface(SPI) bus based on analyzing its mechanism and reason. The data capture rate is increased from 200 ksps to 780 ksps by using the clock source provided by single chip microcomputer. An overall scheme of the triaxial overload measurement is proposed based on this work. The results show that the capture rate can be increased to 2.5 Msps by improving the SPI bus clock rate, and it will serve as the future research direction.

关键词

存储测试/侵彻过载/SPI串行总线

Key words

storage measurement/penetration overload/Serial Peripheral Interface bus

分类

信息技术与安全科学

引用本文复制引用

高进忠,孙远程,黄玉川,苗江宏..侵彻过载高速存储测试的研究与实现[J].太赫兹科学与电子信息学报,2014,(6):813-816,4.

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