太赫兹科学与电子信息学报Issue(6)：927-931,936,6.DOI:10.11805/TKYDA201406.0927
瞬态电压抑制二极管的建模及仿真
Modeling and simulation of the transient voltage suppression diode
摘要
Abstract
Based on 0.5μm CMOS process,a Transient Voltage Suppressor(TVS) diode is designed. Using the black box theory to build the negative operating character under high voltage and high current of the device,the curve containing the first breakdown point and the second breakdown(hardware failure) point is obtained by Matlab. In order to configure the accuracy of the model, the Silvaco TCAD(Computer Aided Design Technology) device simulation platform is adopted. The curves of two strategies are basically equal. And the model built can predict the electronic characteristic of TVS diode when suppressing transient voltage.关键词
静电放电/TVS二极管/热源模型/计算机辅助设计仿真/二次击穿点Key words
electro-static discharge/TVS diode/heat source model/TCAD simulation/secondary breakdown point分类
信息技术与安全科学引用本文复制引用
黄薇,罗启元,蒋同全,汪洋,金湘亮..瞬态电压抑制二极管的建模及仿真[J].太赫兹科学与电子信息学报,2014,(6):927-931,936,6.基金项目
国家自然科学基金资助项目(61274043)；教育部科学技术研究重点基金资助项目(212125)；湘潭大学大学生创新基金资助项目 （61274043）
