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有源器件端口反射系数测量方法分析

张翠翠 王益 王建忠

太赫兹科学与电子信息学报Issue(2):267-271,5.
太赫兹科学与电子信息学报Issue(2):267-271,5.DOI:10.11805/TKYDA201502.0267

有源器件端口反射系数测量方法分析

Analysis on the reflection coefficient measurement of the active device

张翠翠 1王益 1王建忠1

作者信息

  • 1. 中国工程物理研究院 计量测试中心,四川 绵阳 621999
  • 折叠

摘要

Abstract

Reflection coefficient of the active device is the main parameter which directly affects the output power of the signal. The two methods-impedance tuner and Vector Network Analyzer(VNA) frequency shift , are analyzed in order to measure the reflection coefficient of active device on the state of"RF ON". Some measurement experiments on the signal generator and amplifier are performed. The results show that, the difference between the two methods is less than 0.06,and the phase difference is below 10°, under 10 dBm of the output. The work provides feasible ways to measure the reflection coefficient of active devices.

关键词

有源器件/反射系数测量/阻抗调配器/网络分析仪

Key words

active device/reflection coefficient measurement/impedance tuner/network analyzer

分类

信息技术与安全科学

引用本文复制引用

张翠翠,王益,王建忠..有源器件端口反射系数测量方法分析[J].太赫兹科学与电子信息学报,2015,(2):267-271,5.

基金项目

科工局技术基础基金资助项目 ()

太赫兹科学与电子信息学报

OACSTPCD

2095-4980

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