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首页|期刊导航|液晶与显示|Tips-PEN 薄膜载流子迁移率的稳态 SCLC 与阻抗谱法测量的研究

Tips-PEN 薄膜载流子迁移率的稳态 SCLC 与阻抗谱法测量的研究

景亚霓 滕支刚 魏志芬

液晶与显示Issue(6):1077-1082,6.
液晶与显示Issue(6):1077-1082,6.DOI:10.3788/YJYXS20142906.1077

Tips-PEN 薄膜载流子迁移率的稳态 SCLC 与阻抗谱法测量的研究

Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy

景亚霓 1滕支刚 1魏志芬2

作者信息

  • 1. 江南大学 物联网工程学院,江苏 无锡 214122
  • 2. 西安电力整流器有限责任公司,陕西 西安 710077
  • 折叠

摘要

Abstract

The field-dependent hole mobility of Tips-PEN film prepared by solution-process was ex-tracted with steady-state SCLC and impedance spectroscopy method,and the results of the two methods were compared and analyzed.The samples used in this study have a general structure of p+Si/PEDOT∶PSS/Tips-PEN/Ag,which is a single-carrier device.For Tips-PEN thickness of 87 nm devices,the zero field mobility and the field-dependent factors obtained with steady-state SCLC were 1.21 × 10 -5 cm2/(V􀅰s)and 0.002 4 (cm/V)1/2 ,respectively.For thickness of 827 nm device,the zero field mobility and field-dependent factors obtained with impedance spectroscopy were 1.21 9 × 10 -5 cm2/(V􀅰s)and 0.003 47 (cm/V)1/2 ,respectively.The smaller field-dependent factor obtained by steady-state SCLC shows that the mobility is weaker dependent on the field.This is due to much higher electric field applied in order to get steady-state free-trap SCLC than that in impedance spec-troscopy and then higher carrier concentration is injected.The result shows that there is weaker elec-tric field dependence of mobility in higher carrier concentration and is consistent with theoretical model and simulation.

关键词

Tips-Pentacene/空间电荷限制电流/阻抗谱/迁移率

Key words

Tips-Pentacene/space charge limited current/impedance spectroscopy/mobility

分类

信息技术与安全科学

引用本文复制引用

景亚霓,滕支刚,魏志芬..Tips-PEN 薄膜载流子迁移率的稳态 SCLC 与阻抗谱法测量的研究[J].液晶与显示,2014,(6):1077-1082,6.

基金项目

国家自然科学基金项目(No.60776056) (No.60776056)

液晶与显示

OA北大核心CSCD

1007-2780

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