原子能科学技术Issue(10)：1886-1890,5.DOI:10.7538/yzk.2014.48.10.1886
0.18μm MOS 差分对管总剂量失配效应研究
Total Dose Effect on Mismatch Performance of 0.18 μm MOS Differential Pair Transistors
摘要
Abstract
The study of the total ionizing dose effect of 0.18 μm MOS differential pair transistors which are exposed to a 60Co γ-ray radiation was presented in this paper ,in the view of the characterization of mismatch and degradation mechanism .The results show that NMOS differential pair transistors are more sensitive than PMOS differential pair transistors .In NMOS differential pair transistors ,the mismatch on the transfer characteristic curve and threshold voltage is degraded after irradiation ,whereas this phenomenon does not take place in PMOS differential pair transistors .In addition ,the gate current has the large degree of radiation hardness associated to very thin gate oxide .关键词
M OS差分对管/60 Co γ辐射/失配Key words
MOS differential pair transistors/60 Co γ radiation/mismatch分类
数理科学引用本文复制引用
吴雪,陆妩,王信,郭旗,张兴尧,于新..0.18μm MOS 差分对管总剂量失配效应研究[J].原子能科学技术,2014,(10):1886-1890,5.基金项目
模拟集成电路国家重点实验室（NLAIC）基金资助项目 （）
