原子能科学技术Issue(11)：2165-2169,5.DOI:10.7538/yzk.2014.48.11.2165
0畅18μm CMOS 电路瞬时剂量率效应实验研究
Experimental Research of Transient Dose Rate Effect on CMOS Circuit With Feature Size of 0.18 μm
王桂珍 1林东生 1齐超 1白小燕 1杨善潮 1李瑞宾 1马强 1金晓明 1刘岩1
作者信息
- 1. 西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室，陕西西安 710024
- 折叠
摘要
Abstract
The transient dose rate effect on the CMOS inverter and the CMOS static ran‐dom access momery (SRAM ) with feature size of 0.18 μm was studied under pulsed laser and pulsed X‐ray .The transient dose rate effect on deep sub‐micron CMOS circuit was measured and compared with that on μm CMOS circuit . The results show that 0.18 μm CMOS SRAM is more susceptible to transient dose rate environment than μm CMOS SRAM andμm CMOS inverter is more susceptible than 0.18μm CMOS inverter .关键词
CM OS电路/脉冲激光/剂量率翻转/翻转阈值/特征尺寸Key words
CM OS circuit/pulsed laser/dose rate upset/upset threshold/feature size分类
信息技术与安全科学引用本文复制引用
王桂珍,林东生,齐超,白小燕,杨善潮,李瑞宾,马强,金晓明,刘岩..0畅18μm CMOS 电路瞬时剂量率效应实验研究[J].原子能科学技术,2014,(11):2165-2169,5.
