原子能科学技术Issue(12)：2364-2369,6.DOI:10.7538/yzk.2014.48.12.2364
65 nm 工艺 SRAM 低能质子单粒子翻转实验研究
Single Event Upset Test of Low Energy Proton on 65 nm SRAM
摘要
Abstract
Based on the Beijing HI‐13 tandem accelerator proton beam source and techni‐cal improvements ,2‐15 MeV low energy proton beam was obtained .Single event upset (SEU) test of low energy proton was carried out on commercial 65 nm 4M × 18 bit large capacity SRAM . The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism ,and the SEU cross section caused by this mechanism is about 2‐3 magnitude order larger than that caused by nuclear reaction mechanism .With the test data ,the proton upset mechanism ,LET and range ,critical charge ,and on‐orbit soft error rate (SER) were analyzed .The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER can be a significant contribution to total proton SER in space .关键词
质子/单粒子翻转/直接电离/随机静态存储器/软错误率Key words
proton/single event upset/direct ionization/SRAM/soft error rate分类
能源科技引用本文复制引用
何安林,王惠,范辉,高丽娟,孔福全,郭刚,陈力,沈东军,任义,刘建成,张志超,蔡莉,史淑廷..65 nm 工艺 SRAM 低能质子单粒子翻转实验研究[J].原子能科学技术,2014,(12):2364-2369,6.基金项目
国家自然科学基金资助项目 （）
