原子能科学技术Issue(1)：176-180,5.DOI:10.7538/yzk.2015.49.01.0176
单粒子翻转敏感区定位的脉冲激光试验研究
Experimental Study on Pulsed Laser Single Event Upset Sensitivity Mapping
摘要
Abstract
The pulsed laser facility for single event upset (SEU) sensitivity mapping was utilized to study SEU sensitivity mapping of SRAM IDT71256 .To avoid the block of the metal layer in the front side of integrated circuit ,the backside testing method was used .The experiment results show that the SEU sensitivity of the SRAM cell depends on the pattern of data stored in the memory cell .The SEU sensitivity mapping could be used to construct the corresponding SEU cross section ,w hich is validated by the heavy ion beam test result .关键词
单粒子效应/敏感区定位/数据类型/翻转截面Key words
single event effect/sensitivity mapping/data pattern/upset cross section分类
信息技术与安全科学引用本文复制引用
余永涛,封国强,上官士鹏,陈睿,韩建伟..单粒子翻转敏感区定位的脉冲激光试验研究[J].原子能科学技术,2015,(1):176-180,5.基金项目
基础科研计划资助项目（A1320110028）；中国科学院支撑技术项目资助 （）
