原子与分子物理学报Issue(5)：812-815,4.DOI:10.3969/j.issn.1000-0364.2014.05.022
X 射线在金-硅界面剂量增强系数与金和硅厚度关系的模拟研究
Simulation of the dependence of X ray dose enhancement factor on gold and silicon at gold-silicon interface
摘要
Abstract
The dependence of DEF on energy at gold-silicon interface for different thickness of gold and silicon is simulated by using Monte Carlo method .The calculation results indicate that the thickness of gold and silicon will effect the DEF in silicon ,the DEF at gold-silicon interface will increase with the in-creasing of gold and silicon thickness .Furthermore ,for fixed gold thickness ,the DEF will decrease with the increasing distance from gold-silicon interface .关键词
半导体/剂量增强/蒙特卡罗方法/界面/X射线Key words
Semiconductor/Dose enhancement/Monte Carlo Method/Interface/X-ray分类
数理科学引用本文复制引用
张建芳,李春芝,黄志军..X 射线在金-硅界面剂量增强系数与金和硅厚度关系的模拟研究[J].原子与分子物理学报,2014,(5):812-815,4.基金项目
国家自然科学基金（11265009，11005058）；内蒙古民族大学科学研究基金资助项目 （）
