中国光学Issue(3)：428-438,11.DOI:10.3788/CO.20150803.0428
丁胺包裹的 CdSe 量子点敏化的 TiO2纳米晶薄膜电子转移机制
Electron transfer mechanism of butylamine-capped CdSe quantum dot sensitized nanocrystalline TiO2 films
摘要
Abstract
In this paper, we have investigated the initial interfacial electron transfer dynamics in butylamine-capped CdSe quantum dot( QD)-sensitized nanocrystalline TiO2 films by ultrafast spectroscopy.Different with previous reports, the experiment results indicate that after surface modification of CdSe QDs, a two-phase electron injection mechanism ( hot and cold electron injection ) is validated, namely, electrons transfer from high vibration energy levels in conduction band and conduction band bottom of CdSe quantum dots into con-duction band of TiO2 , respectively.This mechanism depicts a picture on the detailed charge transfer processes at the nano interfaces.We further find that the electron coupling strength (3.6 ±0.1 meV) of hot electron in-jection is two orders of magnitude larger than that of relaxed ground-state electron injection, which gives a val-ue of ~50 μeV accompanied with reorganization energy 0.083 eV on the basis of Marcus theory.关键词
量子点太阳能电池/半导体纳米晶/表面修饰/CdSe/热电子注入Key words
quantum dots solar cell/semiconductor nanocrystals/surface modification/CdSe/hot electron in-jection分类
信息技术与安全科学引用本文复制引用
李正顺,岳圆圆,张艳霞,王岩,王雷,王海宇..丁胺包裹的 CdSe 量子点敏化的 TiO2纳米晶薄膜电子转移机制[J].中国光学,2015,(3):428-438,11.基金项目
国家自然科学基金资助项目 （）
