中南民族大学学报（自然科学版）Issue(1)：79-82,4.
硅基宽带双偏振单模狭缝波导
Wideband Dual Polarizations Silicon Single M ode Slot W aveguide
摘要
Abstract
Wideband dual polarizations single mode characteristics of silicon slot waveguide is investigated by three dimensional plane-wave expansion method and three dimensional finite difference time domain method.By tuning the width of the surrounding silicon region of the slot waveguides, 320.6 nm wide bandwidth for both quasi-TE and quasi-TM modes can be obtained in an optimized structure, and electric field enhanced in the low index slot zone for quasi-TE fundamental modes is also observed for the whole bandwidth.The investigation proposed in this paper would be served as a basis for designing polarization related silicon photonics devices.关键词
宽带/偏振/狭缝波导Key words
wideband/polarization/slot waveguide分类
信息技术与安全科学引用本文复制引用
侯金,李博雅,王林枝,杨春勇,钟志有,陈少平..硅基宽带双偏振单模狭缝波导[J].中南民族大学学报（自然科学版）,2015,(1):79-82,4.基金项目
国家自然科学基金资助项目（11147014＆11491240105）；湖北省自然科学基金资助项目 （）
