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Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

Pongthavornkamol Tiwat Pang Lei Wang Xinhua Huang Sen Liu Guoguo Yuan Tingting Liu Xinyu

半导体学报（英文版）2015，Vol.36Issue(7)：83-89,7.

半导体学报（英文版）2015，Vol.36Issue(7)：83-89,7.DOI:10.1088/1674-4926/36/7/074006

Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications

Pongthavornkamol Tiwat ¹Pang Lei ¹Wang Xinhua ¹Huang Sen ¹Liu Guoguo ¹Yuan Tingting ¹Liu Xinyu¹

作者信息

1. Key Laboratory of Microelectronics Devices & Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
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摘要

关键词

AlGaN/GaN HEMT/pulsed Ⅰ-Ⅴ/trapping effect/self-heating effect

Key words

AlGaN/GaN HEMT/pulsed Ⅰ-Ⅴ/trapping effect/self-heating effect

引用本文复制引用

Pongthavornkamol Tiwat,Pang Lei,Wang Xinhua,Huang Sen,Liu Guoguo,Yuan Tingting,Liu Xinyu..Optimized power simulation of AlGaN/GaN HEMT for continuous wave and pulse applications[J].半导体学报（英文版）,2015,36(7):83-89,7.

基金项目

Project supported by the National Natural Science Foundation of China (No.61204086). （No.61204086）

半导体学报（英文版）

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ISSN：1674-4926

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