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Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs

Wang Zhiming Zhao Zhuobin Hu Zhifu Huang Hui Cui Yuxing Sun Xiguo Mo Jianghui

半导体学报（英文版）2015，Vol.36Issue(8)：83-87,5.

半导体学报（英文版）2015，Vol.36Issue(8)：83-87,5.DOI:10.1088/1674-4926/36/8/084002

Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs

Wang Zhiming ¹Zhao Zhuobin ¹Hu Zhifu ²Huang Hui ³Cui Yuxing ²Sun Xiguo ²Mo Jianghui²

作者信息

1. Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology, Beijing 100081, China
2. Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
3. National Institute of Metrology, Beijing 100029, China
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摘要

关键词

InP/PHEMT/millimeter wave/low noise/on-wafer measurement

Key words

InP/PHEMT/millimeter wave/low noise/on-wafer measurement

引用本文复制引用

Wang Zhiming,Zhao Zhuobin,Hu Zhifu,Huang Hui,Cui Yuxing,Sun Xiguo,Mo Jianghui..Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs[J].半导体学报（英文版）,2015,36(8):83-87,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.61275107). （No.61275107）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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