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Design of broadband class-F power amplifier for multiband LTE handsets applications

Zheng Yaohua Zhang Guohao Zheng Ruiqing Li Sizhen Lin Junming Chen Sidi

半导体学报（英文版）2015，Vol.36Issue(8)：136-140,5.

半导体学报（英文版）2015，Vol.36Issue(8)：136-140,5.DOI:10.1088/1674-4926/36/8/085004

Design of broadband class-F power amplifier for multiband LTE handsets applications

Zheng Yaohua ¹Zhang Guohao ¹Zheng Ruiqing ¹Li Sizhen ¹Lin Junming ¹Chen Sidi¹

作者信息

1. Guangdong University of Technology, Guangzhou 510006, China
折叠

摘要

关键词

long term evolution (LTE)/power amplifier/broadband/multiband/InGaP/GaAs HBT

Key words

long term evolution (LTE)/power amplifier/broadband/multiband/InGaP/GaAs HBT

引用本文复制引用

Zheng Yaohua,Zhang Guohao,Zheng Ruiqing,Li Sizhen,Lin Junming,Chen Sidi..Design of broadband class-F power amplifier for multiband LTE handsets applications[J].半导体学报（英文版）,2015,36(8):136-140,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.61404032). （No.61404032）

半导体学报（英文版）

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ISSN：1674-4926

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