发光学报Issue(8)：888-892,5.DOI:10.3788/fgxb20153608.0888
Ni/SnO2复合薄膜的制备与光电性能
Preparation and Photoelectric Properties of Ni/SnO2 Composite Thin Films
摘要
Abstract
Ni/SnO2 films were prepared by spin coating Ni/SnO2 gel on the glass substrates. The effects of the doping amount of nickel and calcination temperature on the structure and morphology of Ni/SnO2 films were discussed. The structure and morphology of Ni/SnO2 composite film were char-acterized by using XRD, IR, SEM and other testing methods. The results show that the particles of the film calcined at 500 ℃ have high crystallization, small size, and distribute uniformly. The right amount of Ni2+ doping can improve the absorbance in the near ultraviolet region of SnO2 film, and the absorbance in the near ultraviolet region of Ni/SnO2 film decreases with the increasing of Ni2+mole fraction from 5% to 10%. The conductivity of Ni/SnO2 film is the best when Ni2+ mole frac-tion is 6%.关键词
Ni/SnO2/复合薄膜/溶胶-凝胶/功能材料Key words
Ni/SnO2/composite thin films/sol-gel/functional materials分类
数理科学引用本文复制引用
何瑞英,魏长平,王国栋,伞靖,彭春佳..Ni/SnO2复合薄膜的制备与光电性能[J].发光学报,2015,(8):888-892,5.基金项目
吉林省教育厅“十二五”科学技术研究项目(吉教科合字[2013]第36号)资助 （吉教科合字[2013]第36号）
