发光学报Issue(8)：941-946,6.DOI:10.3788/fgxb20153608.0941
旋涂速度对制备P3 HT有机场效应晶体管性能的影响
Role of Spinning Speed in Fabrication of Spin-coated P3 HT-based OFETs
摘要
Abstract
P3HT-based organic field effect transistors( OFETs) with PMMA gate dielectric were fabricated by solu-tion process. The effects of the spinning speeds of both P3HT active layer and PMMA gate dielectric on the perform-ance of the devices were investigated. The experiment results show that the fabricated OFETs exhibit the optimal per-formance at the spinning speeds of 2 000 r/min of both P3HT and PMMA, of which the field effect mobility is 6. 84 × 10 -2 cm2 ·V-1 ·s-1 . This indicates that spinning speed is a technological parameter to improve the performance of solution-processed OFETs.关键词
有机场效应晶体管/旋涂速度/P3HT/PMMAKey words
organic field effect transistors/spinning speed/P3HT/PMMA分类
数理科学引用本文复制引用
蒋晶,郑灵程,王倩,吴峰,程晓曼..旋涂速度对制备P3 HT有机场效应晶体管性能的影响[J].发光学报,2015,(8):941-946,6.基金项目
国家自然科学基金(61076065,11204214)资助项目 （61076065,11204214）
