激光技术Issue(5)：654-657,4.DOI:10.7510/jgjs.issn.1001-3806.2015.05.014
GaAs／AlGaAs环形激光器的量子阱结构优化
Optimization of quantum well structure for GaAs/AlGaAs ring lasers
摘要
Abstract
In order to study effect of multiple quantum well ( MQW) on threshold current of a semiconductor ring laser (SRL), the function relationship between threshold current of SRL and MQW structural parameters was analyzed based on the oscillation condition of a conventional Fabry-Perot laser .An optimal expression of quantum well number was derived .Equivalent model of SRL was founded by utilizing device simulation software ATLAS .The effect of quantum well number , well width and barrier thickness on threshold current density of SRL were simulated and analyzed at various operating temperatures .The simulation results show that threshold current decreases firstly and then increases with increasing of well number and well width . A set of optimal values existed .After determining the appropriate well number and well width , the barrier with relatively narrower thickness can further reduce the threshold current .For GaAs/AlGaAs material system and device structure , the optimal parameters are M=3, dw =20nm, and db =10nm respectively.关键词
激光器/半导体环形激光器/多量子阱/阈值电流Key words
lasers/semiconductor ring laser/multiple quantum well/threshold current分类
信息技术与安全科学引用本文复制引用
郭婧,谢生,毛陆虹,郭维廉..GaAs／AlGaAs环形激光器的量子阱结构优化[J].激光技术,2015,(5):654-657,4.基金项目
国家自然科学基金资助项目 （）
