无机材料学报Issue(8)：887-890,4.DOI:10.15541/jim20150032
GaSe晶体的掺S生长及性能研究
Growth and Characterization of Sulfur-doped GaSe Single Crystals
摘要
Abstract
It is difficult to obtain high quality sulfur-doped GaSe single crystal due to the intensive convection and so-lution diffusion in the melt. High quality GaSe0.89S0.11 single crystal with dimensions off20 mm×60 mm was success-fully grown by Bridgman method using modified furnace with crucible rotation technique. The crystal was character-ized by using energy dispersive spectrometer, X-ray diffractometer, nanoindentation, and Fourier infrared spectrometer. The measured results indicate that the sulfur-doped GaSe crystal with sulfur level of 2.38wt% shows significantly im-proved mechanical properties. The infrared transmission tests indicate that it has slightly higher transmittance in the range of 0.62–12.5 µm than the pure GaSe crystal. The results demonstrate that the modified Bridgman method could be used to produce high quality sulfur-doped GaSe crystals.关键词
GaSe0.89S0.11/掺杂/改进的Bridgman炉/坩埚旋转Key words
GaSe0.89S0.11/doped/modified Bridgman furnace/crucible rotation分类
化学化工引用本文复制引用
黄昌保,倪友保,吴海信,王振友,肖瑞春,戚鸣..GaSe晶体的掺S生长及性能研究[J].无机材料学报,2015,(8):887-890,4.基金项目
National Natural Science Foundation of China (51202250) （51202250）
Knowledge Innovation Program of the Chinese Academy of Sciences (13J131211) （13J131211）
