传感技术学报Issue(8)：1125-1130,6.DOI:10.3969/j.issn.1004-1699.2015.08.005
一种大量程SOI压阻式压力传感器
A Piezoresistive SOI Pressure Sensor for Wide Measurement Range
摘要
Abstract
This paper focuses on structural design for optimizing sensitivity of traditional piezoresistive SOI pressure sensor to en⁃hance measurement range in high-temperature environments. By modeling mechanical properties,a shallow-boss configuration is adopt⁃ed for increasing sensitivity and measurement range. Key influence factors of sensitivity including boss thickness and shape are ana⁃lyzed and simulated. Doping concentration,size of single piezoresistor,arrangement of metal wires and their material are obtained when taking into account device high-temperature performance. Piezoresistor location is arranged on the basis of taking full advantage of max⁃imum(σl-σt)regions to maintain sensitivity and linearity. According to stress distribution of the diaphragm,U-shaped piezoresistors are finally adopted by considering sensitivity loss due to fabrication deviation of shallow bossed structure. Finite element analysis (FEA)results show that the optimum design enables the sensor chip to operate in wider pressure condition(within 10 MPa)with a high sensitivity of 86.6 mV/(V · MPa)and excellent nonlinearity is less than 0.1%. Compared with other current wide-range sensors,the strength of shallow central bossed structure lies in sensitivity and overload capacity.关键词
大量程/SOI压阻式压力传感器/高温/有限元分析(FEA)Key words
wide measurement range/piezoresistive SOI pressure sensor/high temperature/finite element analysis(FEA)分类
信息技术与安全科学引用本文复制引用
张瑞,梁庭,熊继军,刘雨涛,王涛龙,王心心..一种大量程SOI压阻式压力传感器[J].传感技术学报,2015,(8):1125-1130,6.基金项目
The project is funded by the National Science Foundation for Distinguished Young Scholars of China （）
