半导体学报（英文版）2015，Vol.36Issue(9)：15-19,5.DOI:10.1088/1674-4926/36/9/093001
Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies
Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies
T.Tibermacine 1A.Merazga 2M.Ledra 1N.Ouhabab1
作者信息
- 1. Laboratory of Metallic and Semi-conducting Materials, University of Biskra, Biskra 07000, Algeria
- 2. physics Department, Faculty of Science, Taif University, Al-Hawia, Taif, Saudi Arabia
- 折叠
摘要
关键词
constant photocurrent method/optical absorption spectrum/micro-crystalline silicon/defect density of statesKey words
constant photocurrent method/optical absorption spectrum/micro-crystalline silicon/defect density of states引用本文复制引用
T.Tibermacine,A.Merazga,M.Ledra,N.Ouhabab..Extraction of the defect density of states in microcrystalline silicon from experimental results and simulation studies[J].半导体学报（英文版）,2015,36(9):15-19,5.
