首页|期刊导航|半导体学报（英文版）|Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
半导体学报（英文版）2015，Vol.36Issue(9)：26-29,4.DOI:10.1088/1674-4926/36/9/093003
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon
摘要
关键词
GaN optoelectronic devices/carbon contamination/high growth rate/yellow luminescenceKey words
GaN optoelectronic devices/carbon contamination/high growth rate/yellow luminescence引用本文复制引用
Mao Qinghua,Liu Junlin,Wu Xiaoming,Zhang Jianli,Xiong Chuanbing,Mo Chunlan,Zhang Meng..Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon[J].半导体学报（英文版）,2015,36(9):26-29,4.基金项目
Project supported by the Key Program of the National Natural Science Foundation of China (No.61334001),the National Natural Science Foundation of China (No.51072076),the National High Technology Research and Development Program of China (Nos.2011AA03A101,2012AA041002),the National Key Technology Research and Development Program of China (No.2011BAE32B01),and the Fund for Less Developed Regions of the National Natural Science Foundation of China (No.11364034). （No.61334001）
