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Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

Li Yanyue Deng Xiaochuan Liu Yunfeng Zhao Yanli Li Chengzhan Chen Xixi Zhang Bo

半导体学报（英文版）2015，Vol.36Issue(9)：58-61,4.

半导体学报（英文版）2015，Vol.36Issue(9)：58-61,4.DOI:10.1088/1674-4926/36/9/094003

Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation

Li Yanyue ¹Deng Xiaochuan ¹Liu Yunfeng ²Zhao Yanli ³Li Chengzhan ³Chen Xixi ¹Zhang Bo¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
2. Institute of Optics and Electronics, Chinese Academy of Sciences, Chengdu 610209, China
3. Power Electronics Business Unit, Zhuzhou CSR Times Electric Co., Ltd., Zhuzhou 412001, China
折叠

摘要

关键词

C-V characteristics/4H-SiC MOS/post-oxidation annealing/SiC/SiO2

Key words

C-V characteristics/4H-SiC MOS/post-oxidation annealing/SiC/SiO2

引用本文复制引用

Li Yanyue,Deng Xiaochuan,Liu Yunfeng,Zhao Yanli,Li Chengzhan,Chen Xixi,Zhang Bo..Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J].半导体学报（英文版）,2015,36(9):58-61,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.61234006) and the State Grid of China (No.sgri-wd-71-14-003). （No.61234006）

半导体学报（英文版）

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ISSN：1674-4926

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