Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETsOACSCDCSTPCD

作者：Fang Wen;Eddy Simoen;Li Chikang;Marc Aoulaiche;Luo Jun;Zhao Chao;Cor Claeys

作者单位：IMEC, Kapeldreef 75, B-3001 Leuven, BelgiumE.E.Depart.KU Leuven, Kasteelpark 10, B-3001 Leuven, BelgiumKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumGraduate Institute of Photonics and Optoelectronics and Department of Electrical, Engineering, National Taiwan University, Taipei 10617, Taiwan, ChinaMicron Technology Belgium, IMEC Campus, B-3001 Leuven, BelgiumKey Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

中文关键词：random telegraph noiselow frequency noiseultra-thin BOXsilicon-on-insulatorsingle charge trap

英文关键词：random telegraph noiselow frequency noiseultra-thin BOXsilicon-on-insulatorsingle charge trap

刊名：《半导体学报（英文版）》 2015 (9)

页码/页数：66-70,5

DOI：10.1088/1674-4926/36/9/094005