首页|期刊导航|半导体学报（英文版）|Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory
半导体学报（英文版）2015，Vol.36Issue(9)：79-84,6.DOI:10.1088/1674-4926/36/9/094008
Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory
Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory
摘要
关键词
3D charge trapping devices/vertical charge loss/lateral charge migration/semiconductor device simulationKey words
3D charge trapping devices/vertical charge loss/lateral charge migration/semiconductor device simulation引用本文复制引用
Li Xinkai,Huo Zongliang,Jin Lei,Jiang Dandan,Hong Peizhen,Xu Qiang,Tang Zhaoyun..Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trapping memory[J].半导体学报（英文版）,2015,36(9):79-84,6.基金项目
Project supported by the National Natural Science Foundation of China (Nos.61474137,61176073,61306107). （Nos.61474137,61176073,61306107）
