红外技术Issue(9)：778-782,5.
短波红外阈场助式光电阴极p-InGaAs/p-InP异质结设计与仿真
Design and Simulation of p-InGaAs/p-InP Heterojunction within Short-wave Infrared Threshold Field-assisted Photocathode
摘要
Abstract
One type of shortwave infrared threshold transmission field-assisted photocathode was reviewed, because of its heterojunction structure, the photon absorption layer and electron-emitting layer were separated from each other. On the basis of significant infrared photon absorption effect and high efficient carrier transmission effect, the influence of field-assisted voltage impact upon the energy band structure and the short-wave infrared threshold photocathode were modeled and simulated. This study demonstrates that the schottky barrier bias voltage at least reaches to 8 V to eliminate the effect of p-InGaAs/p-InP heterojunction barrier. And under this condition, in order to get smaller leakage current, the thickness of In0.53Ga0.47As absorption layer is 2m, the thickness of InP electron-emitting layer is 1m, and both dopant level are 1×1016cm-3.关键词
场助式光阴极/短波红外阈/InGaAs/异质结Key words
field-assisted photocathode/short-wave infrared threshold/InGaAs/heterojunction分类
信息技术与安全科学引用本文复制引用
刘峰,石峰,焦岗成,师宏立,苗壮,任彬..短波红外阈场助式光电阴极p-InGaAs/p-InP异质结设计与仿真[J].红外技术,2015,(9):778-782,5.基金项目
微光夜视技术重点实验室基金。 （）
