物理化学学报Issue(9)：1708-1714,7.DOI:10.3866/PKU.WHXB201507101
n型半导体硅电极表面Au的电化学成核机理
Electrochemical Nucleation of Au onn-Type Semiconductor Silicon Electrode Surface
摘要
Abstract
Cyclic voltammetry and chronoamperometry have been used to investigate the mechanism of gold electrodeposition on then-Si(111) electrode surface from a citrate bath, which had successfully applied to directly electroplate a dense gold film on the silicon surface. The results show that Au electrodeposition on the n-type silicon surface is an irreversible process, and the nucleation overpotential reaches 250 mV. According to Cottrell equation, the diffusion coefficient (D) is calculated to be (1.81 ± 0.14) × 10−4 cm2s−1. The Scharifker-Hils (SH) model was used to analyze the experimental data. Agreement between the fitting curves and the theoretical curves confirms that the nucleation process of Au electrodeposition on then-type silicon surface follows the progressive nucleation mechanism with three-dimensional growth under diffusion control. To further confirm the progressive nucleation mechanism, scanning electron microscopy (SEM) was used to observe the nucleation and growth of Au deposits at the initial stage of electrodeposition. The SEM results show that the morphology and density of the Au deposits are affected by the electrochemical deposition potential and time.关键词
n型硅/Au/循环伏安/电位阶跃/成核机理Key words
n-Type silicon/Au/Cyclic voltammetry/Chronoamperometry/Nucleation mechanism分类
化学化工引用本文复制引用
吴小英,杨丽坤,闫慧,杨防祖,田中群,周绍民..n型半导体硅电极表面Au的电化学成核机理[J].物理化学学报,2015,(9):1708-1714,7.基金项目
The project was supported by the State Major Program for Scientific Instrument Development of China (2011YQ03012406), Innovation Group of Interfacial Electrochemistry, China (21321062), and National Natural Science Foundation of China (21373172).国家重大科学仪器设备开发专项(2011YQ03012406),国家自然科学基金界面电化学创新群体(21321062)及国家自然科学基金(21373172)资助项目 （2011YQ03012406）
