现代电子技术2015，Vol.38Issue(18)：102-105,4.
一种双栅结构抗单粒子翻转加固SRAM存储单元
SRAM memory unit with SEU-resisted strengthening ability based on dual-gate structure
姚思远 1刘文平1
作者信息
- 1. 西安微电子技术研究所,陕西 西安 710065
- 折叠
摘要
Abstract
A SRAM memory unit with single event upset(SEU)strengthening ability based on dual-gate MOS structure is proposed by analyzing the single event effects and SEU-resisted circuit strengthening theory. This unit has characteristics of fast upset recovery,quick writing and low static power consumption while realizing SEU-resisted strengthening. The circuit was simu-lated with 0.18 μm CMOS technology. The simulation results indicate that the strengthening unit can read and write properly, and the SEU threshold is better than 100 MeV·cm2/mg. It is predicted that this circuit would have good stability in the space ra-diation environment.关键词
单粒子翻转/双栅结构/SRAM存储单元/加固设计Key words
SEU/dual-gate structure/SRAM memory unit/strenthening design分类
信息技术与安全科学引用本文复制引用
姚思远,刘文平..一种双栅结构抗单粒子翻转加固SRAM存储单元[J].现代电子技术,2015,38(18):102-105,4.
