现代电子技术2015，Vol.38Issue(18)：106-109,4.
用于射频集成的高Q硅基电感的优化设计
Optimization design of high-Q silicon-based inductor applied to RF integration
摘要
Abstract
The electrical performance of silicon-based spiral indicator constituted with multi-layer metal is studied by the combined method of theoretical analysis and electromagnetic simulation. The silicon-based RF high-Q indicator applied to RF cir-cuit integration was optimized and acquired. Among various loss mechanisms influencing Q-value of the indicator,the influence of skin effect on the indicator is researched emphatically. The silicon-based Q-value of the indicator after optimizing the struc-ture parameter and the metal stacking can reach 60,and the self-resonant frequency can achieve 10 GHz. The inductor can be better applied to networks of filtering,frequency-selecting and matching in RF system.关键词
硅上电感/趋肤效应/射频系统集成/电磁仿真Key words
silicon-based inductor/skin effect/RF system integration/electromagnetic simulation分类
信息技术与安全科学引用本文复制引用
王惠娟,潘杰,任晓黎,曹立强,于大全,万里兮..用于射频集成的高Q硅基电感的优化设计[J].现代电子技术,2015,38(18):106-109,4.基金项目
重大科学技术专项(2013ZX02502-004) （2013ZX02502-004）
高效集成扇出型封装及任意互连高频封装基板(2014ZX02501003) （2014ZX02501003）
