电源技术Issue(12)：2320-2323,4.
基于PSPICE的IGBT宽频等效电路模型研究
Wide-band equivalent circuit model of IGBT based on PSPICE
摘要
Abstract
Insulated Gate Bipolar Transistor(IGBT) valve was the core of flexible DC converter system. The establish of practical and accurate IGBT model was very important significance Forgetting ready for simulating electromagnetic disturbance source. In order to construct IGBT wide-band equivalent circuit, compound model method was used. Parts program was used to extract the parameters of MOSFET and BJT respectively. On this basis, starting from the conductive mechanism of IGBT, the equivalent circuit model was built by using the internal voltage-control ed parasitic capacitance of potential barrier capacitance diode device, and the parasitic parameters were exacted by using the way of combining IGBT data sheet and calculation, and then the steady-state and dynamic characteristic were simulated. The contrasts between simulation results and measured results manufacturer were provided, the correctness of this model was verified.关键词
IGBT/PSPICE仿真/宽频等效电路模型/模型参数Key words
IGBT/PSPICE simulation/wide-band equivalent circuit model/model parameter分类
信息技术与安全科学引用本文复制引用
王白音其其格,张卫东,陈中园,王志霞..基于PSPICE的IGBT宽频等效电路模型研究[J].电源技术,2014,(12):2320-2323,4.基金项目
国家电网公司科技项目(DL17201200040) （DL17201200040）
