物理学报Issue(9)：90581-90588,8.DOI:10.7498/aps.63.098402
温度改变对钛氧化物忆阻器导电特性的影响
Influence of temp erature change on conductive characteristics of titanium oxide memristor
摘要
Abstract
Nano-scaled titanium oxide memristors exhibit unstable conductive characteristics under the same test condition:restricting the possibility to have accurate reading and control of the transient resistance of the device. Moreover, the reliability and stability of memristor-based circuits cannot be guaranteed. Coexistence of dopant drift and tunnel barrier is one of possible origins which causes undesirable instability, and the ambient temperature has a close relationship with dopant drift. However, there have been no detailed researches which may improve the stability of memristors by controlling temperatures. Based on the coexistence of dopant drift and tunnel barrier, the connections between temperature and memristor conductive characteristics are analyzed, and the influences of changes of active area width and initially doped layer width on the critical temperature are studied. Simulations are performed in SPICE and the results are given in this paper. In conclusion, methods are proposed for enhancing the conductive stability of memristors, which include increasing the active area width, decreasing the initially doped layer width, keeping the temperature to be under the critical value, and stability. Our work may provide a basis for manufacturing memristors with stable performance and promoting the practical circuit in applications.关键词
忆阻器/温度/杂质漂移/隧道势垒Key words
memristor/temperature/dopant drift/tunnel barrier引用本文复制引用
徐晖,田晓波,步凯,李清江..温度改变对钛氧化物忆阻器导电特性的影响[J].物理学报,2014,(9):90581-90588,8.基金项目
国家自然科学基金(批准号:61171017, F010505)资助的课题 （批准号:61171017, F010505）
